Recently, the research group led by Wang Xinran from the School of Electronic Science and Engineering at Nanjing University has made breakthroughs in the field of manufacturing technology for wafer-scale single-crystal two-dimensional (2D) transition metal dichalcogenides (TMDCs) semiconductors. The team developed a lanthanum-passivated sapphire substrate, enabling the epitaxial growth of 6-inch single-crystal MoS₂, WS₂, WSe₂, and MoSe₂ wafers via metal-organic chemical vapor deposition (MOCVD). Wafer-scale spectroscopies and device measurements demonstrate the exceptional quality and uniformity, with average mobilities of 110 cm²·V⁻¹·s⁻¹ for n-MoS₂ and 131 cm²·V⁻¹·s⁻¹ for p-WSe₂, respectively. This work fundamentally addresses the long-standing challenge of scalable single-crystal TMDC production, marking a critical step toward their industrial application in next-generation electronics. 

Fig. 1. The structure of La-Al2O3(0001).

Fig. 2. Characterization of 150-mm single-crystalline TMDC wafers.

Fig. 3. Electrical performance of 150-mm single-crystalline MoS2.

The relevant research results were published on October 23, 2025, in the journal Science under the title "Robust epitaxy of single-crystal transition-metal dichalcogenides on lanthanum-passivated sapphire".

Source: https://doi.org/10.1126/science.aea0849